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ST 2SA1585
PNP Silicon Epitaxial Planar Transistor
The transistor is subdivided into two groups, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
1)
Symbol -VCBO -VCEO -VEBO -IC 1) -ICP Ptot Tj TS
Value 20 20 6 2 5 400 150 - 55 to + 150
Unit V V V A mW
O
C C
O
Single pulse Pw = 10 ms
Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 2 V, -IC = 100 mA Current Gain Group Q R Symbol hFE hFE -V(BR)CBO -V(BR)CEO -V(BR)EBO -ICBO -IEBO -VCE(sat) fT COB Min. 120 180 20 20 6 Typ. 240 35 Max. 270 390 100 100 0.5 Unit V V V nA nA V MHz pF
Collector Base Breakdown Voltage at -IC = 50 A Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 50 A Collector Cutoff Current at -VCB = 20 V Emitter Cutoff Current at -VEB = 5 V Collector Emitter Saturation Voltage at -IC = 2 A, -IB = 0.1 A Transition Frequency at -VCE = 2 V, IE = 500 mA, f = 100 MHz Output Capacitance at -VCB = 10 V, f = 1 MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 28/07/2006
ST 2SA1585
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 28/07/2006

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